2D graphitic-like gallium nitride and other structural selectivity in confinement at the graphene/SiC interface-Reference-Cited by-同舟云学术

2D graphitic-like gallium nitride and other structural selectivity in confinement at the graphene/SiC interface

Published:2023 Issue:41 Volume:25 Page:5810-5817
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Sfuncia Gianfranco¹^ORCID,Nicotra Giuseppe¹,Giannazzo Filippo¹^ORCID,Pécz Béla²^ORCID,Gueorguiev Gueorgui Kostov³^ORCID,Kakanakova-Georgieva Anelia³^ORCID

Affiliation:

1. Consiglio Nazionale delle Ricerche, Istituto per la Microelettronica e Microsistemi, Strada VIII, n. 5, Zona Industriale, I-95121, Catania, Italy

2. HUN-REN Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege M. út 29-33, Budapest, 1121, Hungary

3. Department of Physics, Chemistry and Biology (IFM), Linköping University, 581 83 Linköping, Sweden

Abstract

An atomic resolution image of an intercalated structure at a graphene/SiC interface along the growth direction which is determined as a buckled GaN monolayer at the immediate interface with an underlying SiC substrate and ultrathin Ga2O3 on top.

Funder

Vetenskapsrådet

Ministero dell'Istruzione, dell'Università e della Ricerca

Horizon 2020

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CE/D3CE00515A

Reference33 articles.

1. Monolayer honeycomb structures of group-IV elements and III-V binary compounds: First-principles calculations