Van der Waals stacks of few-layer h-AlN with graphene: anab initiostudy of structural, interaction and electronic properties-Reference-Cited by-同舟云学术

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Van der Waals stacks of few-layer h-AlN with graphene: anab initiostudy of structural, interaction and electronic properties

Published:2016-02-23 Issue:14 Volume:27 Page:145601
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

dos Santos Renato B,Mota F de Brito,Rivelino R,Kakanakova-Georgieva A,Gueorguiev G K

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/27/i=14/a=145601/pdf

Reference32 articles.

1. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters

2. Advances in Bulk Crystal Growth of AlN and GaN

3. High-quality AlN layers grown by hot-wall MOCVD at reduced temperatures

4. Growth and applications of Group III-nitrides

5. Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag(111)

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4. Broken-gap energy alignment in two-dimensional van der Waals heterostructures for multifunctional tunnel diodes;Physical Chemistry Chemical Physics;2024

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