The mechanical bending effect and mechanism of high performance and low-voltage flexible organic thin-film transistors with a cross-linked PVP dielectric layer-Reference-Cited by-同舟云学术

The mechanical bending effect and mechanism of high performance and low-voltage flexible organic thin-film transistors with a cross-linked PVP dielectric layer

Published:2014 Issue:16 Volume:2 Page:2998-3004
ISSN:2050-7526
Container-title:J. Mater. Chem. C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Yi Mingdong¹²³⁴,Guo Yuxiu¹²³⁴⁵,Guo Jialin¹²³⁴,Yang Tao¹²³⁴,Chai Yuhua⁵⁶⁷,Fan Quli¹²³⁴,Xie Linghai¹²³⁴,Huang Wei¹²³⁴⁸

Affiliation:

1. Center for Molecular Systems and Organic Devices (CMSOD)

2. Key Laboratory for Organic Electronics & Information Displays (KLOEID) and Institute of Advanced Materials (IAM)

3. Nanjing University of Posts &Telecommunications (NUPT)

4. Nanjing 210023, P. R. China

5. School of Electrical and Information

6. Northeast Agricultural University

7. Haerbin 150030, P. R. China

8. Jiangsu-Singapore Joint Research Center for Organic/Bio Electronics & Information Displays

Abstract

Low operational voltage flexible organic thin-film transistors (OTFTs) have been achieved using two layers of cross-linked PVP as the dielectric layer on a flexible polyimide (PI) substrate.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/TC/C3TC32460E

Reference29 articles.

1. Flexible organic transistors and circuits with extreme bending stability

2. Ultra-flexible solution-processed organic field-effect transistors

3. Flexible active-matrix displays and shift registers based on solution-processed organic transistors

4. Highly Bendable, Transparent Thin-Film Transistors That Use Carbon-Nanotube-Based Conductors and Semiconductors with Elastomeric Dielectrics

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