Pressure-enhanced optoelectronic properties in the two-dimensional metal phosphorus trichalcogenide semiconductor SnPSe3

Author:

Qi Mengyao1ORCID,Ye Meiyan2,Ma Shuailing1,Feng Junming1,Du Mingyang1,Huang Hongyu1,Song Hao1ORCID,Cui Tian13

Affiliation:

1. Institutes of High-Pressure Physical, School of Physical Scientific and Technology, Ningbo University, Ningbo, Zhejiang, 315211, China

2. College of Science, Hainan Tropical Ocean University, Sanya 572022, China

3. Synergetic Extreme Condition High-pressure Science Center, State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, Jilin 130012, China

Abstract

A significant enhancement of the optoelectronic properties of SnPSe3 was achieved by pressure, which will stimulate further pursuit of pressure-induced fascinating properties in two-dimensional semiconductors.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Zhejiang Province

Jilin University

Publisher

Royal Society of Chemistry (RSC)

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