Pressure-enhanced optoelectronic properties in the two-dimensional metal phosphorus trichalcogenide semiconductor SnPSe<sub>3</sub>-Reference-Cited by-同舟云学术

Pressure-enhanced optoelectronic properties in the two-dimensional metal phosphorus trichalcogenide semiconductor SnPSe₃

Published:2024 Issue:32 Volume:12 Page:12372-12377
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Qi Mengyao¹^ORCID,Ye Meiyan²,Ma Shuailing¹,Feng Junming¹,Du Mingyang¹,Huang Hongyu¹,Song Hao¹^ORCID,Cui Tian¹³

Affiliation:

1. Institutes of High-Pressure Physical, School of Physical Scientific and Technology, Ningbo University, Ningbo, Zhejiang, 315211, China

2. College of Science, Hainan Tropical Ocean University, Sanya 572022, China

3. Synergetic Extreme Condition High-pressure Science Center, State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, Jilin 130012, China

Abstract

A significant enhancement of the optoelectronic properties of SnPSe3 was achieved by pressure, which will stimulate further pursuit of pressure-induced fascinating properties in two-dimensional semiconductors.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Zhejiang Province

Jilin University

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D4TC01532K

Reference48 articles.

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4. The Role of the Metal Element in Layered Metal Phosphorus Triselenides upon Their Electrochemical Sensing and Energy Applications

5. Layered Metal Thiophosphite Materials: Magnetic, Electrochemical, and Electronic Properties