Electrical transport properties of EuTe under high pressure

Author:

Li Yuqiang12ORCID,Liu Jingxia12ORCID,Zhang Peiguang3,Jing Qiang4ORCID,Liu Xiaofeng5,Zhang Jianxin1,Xiao Ningru2,Yu Liyuan1,Niu Pingjuan12

Affiliation:

1. Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electrical and Electronic Engineering, Tiangong University, Tianjin 300387, China

2. Engineering Research Center of High Power Solid State Lighting Application System of Ministry of Education, Tiangong University, Tianjin 300387, China

3. State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP), Chinese Academy of Sciences, Changchun 130033, China

4. Laboratory of Functional Molecules and Materials, School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, China

5. Tianjin San’an Optoelectronics Co., LTD., Tianjin 300384, China

Abstract

Electrical transport properties of EuTe were investigated under high pressure, confirming a pressure-induced semiconductor–semimetal–metal transition.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Tianjin City

Tianjin Municipal Education Commission

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

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