Electrical transport properties of ZrS2 under high pressure

Author:

Li YuqiangORCID,Liu Yang,Zhang Qiang,Zhao Chuanzhen,Sun Jinlu,Xiao Ningru,Li Yuhong,Liu Yuyao,Ning Pingfan,Liu Hongwei,Niu Pingjuan

Funder

National Natural Science Foundation of China

Natural Science Foundation of Tianjin Municipality

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference48 articles.

1. Atomic layer deposition of emerging 2D semiconductors, HfS2 and ZrS2, for optoelectronics;Mattinen;Chem. Mater.,2019

2. Large scale ZrS2 atomically thin layers;Wang;J. Mater. Chem. C,2016

3. A comparative study of ZrS2-based thin film solar cells using the SCAPS solar cell capacitance simulator;Gupta;Semicond. Sci. Technol.,2023

4. Solution processable high quality ZrO2 dielectric films for low operation voltage and flexible organic thin film transistor applications;Gong;J. Phys. D Appl. Phys.,2018

5. Ab initio insights into Graphene-Zirconium disulfide/diselenide heterostructure as electrode material for alkali-ion batteries;King'ori;Surface. Interfac.,2021

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