Linking photoluminescence of α-Si3N4 to intrinsic point defects via band structure modelling-Reference-Cited by-同舟云学术

Linking photoluminescence of α-Si3N4 to intrinsic point defects via band structure modelling

Published:2016 Issue:9 Volume:6 Page:7568-7574
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Huang Zhifeng¹²³⁴,Chen Fei¹²³⁴⁵,Shen Qiang¹²³⁴,Zhang Lianmeng¹²³⁴

Affiliation:

1. State Key Lab of Advanced Technology for Materials Synthesis and Processing

2. Wuhan University of Technology

3. Wuhan 430070

4. China

5. Massachusetts Institute of Technology

Abstract

Photoluminescence properties have been connected to intrinsic point defects for Si abundant (red bar) and N plentiful (blue bars) α-Si₃N₄via band structure modelling using DFT calculations.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C5RA18739G

Reference42 articles.

1. Dielectric properties of Si3−ξGeξN4 and Si3−ξCξN4: A density functional study

2. Silicon-based oxynitride and nitride phosphors for white LEDs—A review

3. Partial pressure-induced growth of silicon nitride belts with tunable width and photoluminescence properties

4. Tunable photoluminescence from nc-Si/a-SiNx:H quantum dot thin films prepared by ICP-CVD

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