Partial pressure-induced growth of silicon nitride belts with tunable width and photoluminescence properties-Reference-Cited by-同舟云学术

Partial pressure-induced growth of silicon nitride belts with tunable width and photoluminescence properties

Published:2015 Issue:1 Volume:17 Page:23-26
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Cai J.¹²³⁴⁵,Zhang Y. L.¹²³⁴⁵,Lyu Z. Y.¹²³⁴⁵,Zhao J.¹²³⁴⁵,Shen J. C.⁶⁷⁸⁴,Wu Q.¹²³⁴⁵,Wang X. Z.¹²³⁴⁵,Wu X. L.⁶⁷⁸⁴,Chen Y.¹²³⁴⁵,Hu Z.¹²³⁴⁵

Affiliation:

1. Key Laboratory of Mesoscopic Chemistry of MOE

2. School of Chemistry and Chemical Engineering

3. Nanjing University

4. Nanjing 210093, PR China

5. High-Tech Research Institute of Nanjing University (Suzhou)

6. Key Laboratory of Modern Acoustics of MOE

7. Institute of Acoustics

8. Department of Physics

Abstract

Si₃N₄ belts with tunable width were synthesized by regulating the partial pressure of NH₃/N₂ in gaseous mixtures of Ar and NH₃/N₂ during the nitridation of silicon powders, which demonstrated tunable photoluminescence properties.

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/CE/C4CE01903B

Reference28 articles.

1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

2. Ultraviolet light-emitting diodes based on group three nitrides

3. Room-Temperature Ultraviolet Nanowire Nanolasers

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5. Catalytic Growth and Characterization of Gallium Nitride Nanowires

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