Nanowire Y-junction formation during self-faceting on high-index GaAs substrates-Reference-Cited by-同舟云学术

Nanowire Y-junction formation during self-faceting on high-index GaAs substrates

Published:2017 Issue:29 Volume:7 Page:17813-17818
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Méndez-Camacho R.¹²³⁴,López-López M.⁵⁶⁷⁴,Méndez-García V. H.¹²³⁴,Valdez-Pérez D.⁸⁹¹⁰⁴,Ortega E.¹¹¹²¹³¹⁴,Benitez A.¹¹¹²¹³¹⁴,Ponce A.¹¹¹²¹³¹⁴^ORCID,Cruz-Hernández E.¹²³⁴^ORCID

Affiliation:

1. Coordinación para la Innovación y la Aplicación de la Ciencia y la Tecnología (CIACYT)

2. Universidad Autónoma de San Luis Potosí

3. Sierra Leona 550

4. México

5. Physics Department

6. CINVESTAV-IPN

7. México D.F. 07000

8. Instituto Politécnico Nacional

9. UPALM

10. México D.F.

11. Department of Physics and Astronomy

12. The University of Texas at San Antonio

13. San Antonio

14. USA

Abstract

In this contribution, we report on the observation of high-order and bi-dimensional surface mechanisms that allows the self-assembling of an alternating array of straight and bifurcated nanowires.

Funder

National Institute on Minority Health and Health Disparities

Consejo Nacional de Ciencia y Tecnología

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/RA/C7RA01972F

Reference25 articles.

1. Self‐organized growth of regular nanometer‐scale InAs dots on GaAs

2. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces

3. Surface Corrugation of GaAs Layers Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy

4. Corrugated surfaces formed on GaAs(331)A substrates: the template for laterally ordered InGaAs nanowires

5. Photoluminescence study of self-assembled GaAs quantum wires on (631)A-oriented GaAs substrates

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