Unravelling the atomic mechanisms of tetrahedral doping in chalcogenide glass for electrical switching materials-Reference-Cited by-同舟云学术

Unravelling the atomic mechanisms of tetrahedral doping in chalcogenide glass for electrical switching materials

Published:2023 Issue:44 Volume:11 Page:15473-15481
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Gu Rongchuan¹²,Xu Meng³^ORCID,Liu Yongpeng¹²,Shen Yinghua¹²,Qiao Chong⁴,Wang Cai-Zhuang⁵^ORCID,Ho Kai-Ming⁵,Wang Songyou⁶^ORCID,Xu Ming¹²^ORCID,Miao Xiangshui¹²^ORCID

Affiliation:

1. School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China

2. Hubei Yangtze Memory Laboratories, Wuhan 430205, China

3. Department of Electrical and Electronic Engineering, the University of Hong Kong, Hong Kong, China

4. School of Mathematics and Physics, Nanyang Institute of Technology, Nanyang 473004, China

5. Ames Laboratory, U. S. Department of Energy and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011, USA

6. Shanghai Ultra-Precision Optical Manufacturing Engineering Center and Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China

Abstract

This study highlights the crucial role of Si doping in OTS materials by revealing the atomic mechanisms of Si doping that result in high thermal stability, enhanced endurance, and reduced Vth drift in a-GeSiSe materials for ovonic threshold switching (OTS) through first-principles calculations.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

U.S. Department of Energy

Office of Science

Basic Energy Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

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