Contactless bottom-up electrodeposition of nickel for 3D integrated circuits

Author:

Zhao Mingrui1234,Balachandran Rajesh5234,Patterson Zach674,Gouk Roman674,Verhaverbeke Steven674,Shadman Farhang1234,Keswani Manish5234

Affiliation:

1. Chemical and Environmental Engineering

2. University of Arizona

3. Tucson

4. USA

5. Materials Science and Engineering

6. Applied Materials, Inc.

7. Santa Clara

Abstract

Electrochemical oxidation of silicon by water generates electrons and subsequent chemical etching of silicon dioxide by fluoride based species regenerates the surface. The electrons are conducted through bulk silicon and accepted by nickel ions.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Reference38 articles.

1. Copper damascene electrodeposition and additives

2. R. Beica , C.Sharbono and T.Ritzdorf, Proceedings of Electronic Components and Technology Conference, Orlando, 2008, pp. 577–583

3. Overview and outlook of through‐silicon via (TSV) and 3D integrations

4. Reduction of defects in TSV filled with Cu by high-speed 3-step PPR for 3D Si chip stacking

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