Tuning the electronic properties of bilayer group-IV monochalcogenides by stacking order, strain and an electric field: a computational study-Reference-Cited by-同舟云学术

Tuning the electronic properties of bilayer group-IV monochalcogenides by stacking order, strain and an electric field: a computational study

Published:2018 Issue:1 Volume:20 Page:214-220
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Li Ze-Yu¹²³⁴^ORCID,Liu Ming-Yang¹²³⁴^ORCID,Huang Yang¹²³⁴,Chen Qing-Yuan¹²³⁴,Cao Chao¹⁵⁶⁷⁴,He Yao¹²³⁴

Affiliation:

1. Department of Physics

2. Yunnan University

3. Kunming

4. People's Republic of China

5. Hangzhou Normal University

6. Hangzhou

7. Zhejiang 310036

Abstract

As the isoelectronic counterpart of phosphorene, monolayer group IV–VI binary MX (M = Ge, Sn; X = Se, S) compounds have drawn considerable attention in recent years.

Funder

National Natural Science Foundation of China

Program for New Century Excellent Talents in University

Applied Basic Research Foundation of Yunnan Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2018/CP/C7CP06727E

Reference55 articles.

1. Diverse anisotropy of phonon transport in two-dimensional group IV–VI compounds: A comparative study

2. Direct band gaps in group IV-VI monolayer materials: Binary counterparts of phosphorene

3. Strongly bound Mott-Wannier excitons in GeS and GeSe monolayers

4. Vacancies and oxidation of two-dimensional group-IV monochalcogenides

5. Tunable electronic structures of germanium monochalcogenide nanosheets via light non-metallic atom functionalization: a first-principles study

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