Theoretical study on the negative differential resistance behavior of N-doped GeSe monolayer
Author:
Affiliation:
1. College of Electronic and Electric Engineering, Henan Normal University, Xinxiang, China
2. Henan Key Laboratory of Optoelectronic Sensing Integrated Application, Xinxiang, China
3. School of Physics, Henan Normal University, Xinxiang, China
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://www.tandfonline.com/doi/pdf/10.1080/07315171.2023.2189850
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1. Modulating the Rectification Effect of MoTe₂ Monolayer by Substitutional Doping;IEEE Transactions on Electron Devices;2024-09
2. Tunable negative differential resistance behavior in the nitrogen-doped zigzag GeSe nanoribbon based single-gate field effect transistor;Ferroelectrics;2024-02-20
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