Exploring swift-heavy ion irradiation of InGaN/GaN multiple quantum wells for green-emitters: the use of Raman and photoluminescence to assess the irradiation effects on the optical and structural properties-Reference-Cited by-同舟云学术

Exploring swift-heavy ion irradiation of InGaN/GaN multiple quantum wells for green-emitters: the use of Raman and photoluminescence to assess the irradiation effects on the optical and structural properties

Published:2021 Issue:28 Volume:9 Page:8809-8818
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Cardoso José¹²³⁴⁵^ORCID,Ben Sedrine Nabiha¹²³⁴⁵^ORCID,Jóźwik Przemysław⁶⁷⁸⁹¹⁰^ORCID,Sequeira Miguel C.⁶⁷⁸⁹¹⁰,Wetzel Christian M.¹¹¹²¹³¹⁴¹⁵,Grygiel Clara¹⁶¹⁷¹⁸¹⁹,Lorenz Katharina⁶⁷⁸⁹¹⁰^ORCID,Monteiro Teresa¹²³⁴⁵^ORCID,Correia Maria Rosário P.¹²³⁴⁵^ORCID

Affiliation:

1. Departamento de Física & i3N

2. Universidade de Aveiro

3. Campus Universitário de Santiago

4. 3810-193 Aveiro

5. Portugal

6. IPFN

7. Instituto Superior Técnico

8. Campus Tecnológico e Nuclear

9. Estrada Nacional 10

10. P 2695-066 Bobadela LRS

11. Department of Materials Science and Engineering and Department of Physics

12. Applied Physics and Astronomy

13. Rensselaer Polytechnic Institute

14. Troy

15. USA

16. CIMAP

17. CEA-CNRS-ENSICAEN-UNICAEN

18. 14070 Caen Cedex 5

19. France

Abstract

Xe SHI irradiation of InGaN/GaN MQWs leads to surface damage and intermixing at the interfaces. The introduced defects cause a strong quenching of the luminescence as well as a change in the excitation mechanisms.

Funder

European Regional Development Fund

European Social Fund

Fundação para a Ciência e a Tecnologia

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D1TC01603B

Reference58 articles.

1. Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes