nBu2Sn(SnBu)2 and nBu3SnEnBu (E = S or Se) – effective single source precursors for the CVD of SnS and SnSe thermoelectric thin films-Reference-Cited by-同舟云学术

nBu2Sn(SnBu)2 and nBu3SnEnBu (E = S or Se) – effective single source precursors for the CVD of SnS and SnSe thermoelectric thin films

Published:2021 Issue: Volume: Page:
ISSN:2633-5409
Container-title:Materials Advances
language:en
Short-container-title:Mater. Adv.

Author:

Robinson Fred¹²³⁴^ORCID,Curran Peter J.⁵⁶⁴,de Groot C. H. (Kees)⁷²³⁴^ORCID,Hardie Duncan⁵⁶⁴,Hector Andrew L.¹²³⁴^ORCID,Holloway Katherine¹²³⁴,Huang Ruomeng⁷²³⁴^ORCID,Newbrook Daniel⁷²³⁴^ORCID,Reid Gillian¹²³⁴^ORCID

Affiliation:

1. School of Chemistry

2. University of Southampton

3. Southampton SO17 1BJ

4. UK

5. Deregallera Ltd

6. Caerphilly CF83 3HU

7. School of Electronics and Computer Science

Abstract

LPCVD with the title compounds produces S-deficient SnS, or stoichiometric, semiconducting, resistive SnS or SnSe films with large positive Seebeck coefficients and an SnSe power factor of 0.4 μW cm⁻¹ K⁻² at 425 K.

Funder

Engineering and Physical Sciences Research Council

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Chemistry (miscellaneous)

Link

http://pubs.rsc.org/en/content/articlepdf/2021/MA/D1MA00331C

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