Low-Pressure CVD of GeE (E = Te, Se, S) Thin Films from Alkylgermanium Chalcogenolate Precursors and Effect of Deposition Temperature on the Thermoelectric Performance of GeTe
Author:
Affiliation:
1. School of Chemistry, University of Southampton, Southampton SO17 1BJ, U.K.
2. School of Electronics and Computer Science, University of Southampton, Southampton SO17 1BJ, U.K.
Funder
Engineering and Physical Sciences Research Council
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.1c14237
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5. Germanium Compounds Containing Ge═E Double Bonds (E = S, Se, Te) as Single-Source Precursors for Germanium Chalcogenide Materials
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