Germanium Compounds Containing Ge═E Double Bonds (E = S, Se, Te) as Single-Source Precursors for Germanium Chalcogenide Materials
Author:
Affiliation:
1. Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea
Funder
Korea Research Institute of Chemical Technology
Publisher
American Chemical Society (ACS)
Subject
Inorganic Chemistry,Physical and Theoretical Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.inorgchem.6b02697
Reference34 articles.
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5. Insertion Reactions of an Aminogermylene and Formation of a Single‐Source Precursor for GeTe Thin Films
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