Asymmetric contact-induced selective doping of CVD-grown bilayer WS<sub>2</sub> and its application in high-performance photodetection with an ultralow dark current-Reference-Cited by-同舟云学术

Asymmetric contact-induced selective doping of CVD-grown bilayer WS₂ and its application in high-performance photodetection with an ultralow dark current

Published:2024 Issue:17 Volume:16 Page:8583-8596
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Mia Abdul Kaium¹^ORCID,Meyyappan M.¹^ORCID,Giri P. K.¹²^ORCID

Affiliation:

1. Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati 781039, India

2. Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039, India

Abstract

Asymmetric lateral doping in CVD-grown bilayer WS2via contact engineering and its application for high performance photodetection.

Funder

Science and Engineering Research Board

Ministry of Electronics and Information technology

Department of Science and Technology, Ministry of Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/NR/D3NR06118C

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