Experimental and theoretical determination of the role of ions in atomic layer annealing-Reference-Cited by-同舟云学术

Experimental and theoretical determination of the role of ions in atomic layer annealing

Published:2022 Issue:14 Volume:10 Page:5707-5715
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Ueda Scott T.¹,McLeod Aaron²,Jo Youhwan³,Zhang Zichen¹,Spiegelman Jacob¹,Spiegelman Jeff⁴,Alvarez Dan⁴,Moser Daniel⁵,Kanjolia Ravindra⁵,Moinpour Mansour⁵,Woodruff Jacob⁵,Cho Kyeongjae³^ORCID,Kummel Andrew C.²^ORCID

Affiliation:

1. Materials Science and Engineering Program, University of California, San Diego, La Jolla, California 92093, USA

2. Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093, USA

3. Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080, USA

4. Rasirc, Inc., San Diego, CA 92126, USA

5. EMD Electronics, Haverhill, MA 01832, USA

Abstract

The use of a heavier noble gas such as Kr in atomic layer annealing results in higher crystallinity due to higher momentum transfer leading to a more localized and intense surface heating effect occurring over picosecond timescales.

Funder

Semiconductor Research Corporation

National Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D1TC05194F

Reference36 articles.

1. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

2. Area-Selective Atomic Layer Deposition: Conformal Coating, Subnanometer Thickness Control, and Smart Positioning