Control of SrO buffer-layer formation on Si(001) using the pulsed-laser deposition technique
Author:
Affiliation:
1. Advanced Materials Department
2. Jožef Stefan Institute
3. 1000 Ljubljana
4. Slovenia
5. Laboratory of Physics
Abstract
The overview of optimal parameters for deoxidation of the Si(001) surface using SrO and a pulsed-laser deposition method.
Funder
Javna Agencija za Raziskovalno Dejavnost RS
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2016/RA/C6RA16311D
Reference27 articles.
1. Epitaxial integration of perovskite-based multifunctional oxides on silicon
2. Switching of ferroelectric polarization in epitaxial BaTiO3 films on silicon without a conducting bottom electrode
3. Atomic layer deposition of photoactive CoO/SrTiO3 and CoO/TiO2 on Si(001) for visible light driven photoelectrochemical water oxidation
4. Thermodynamic stability of binary oxides in contact with silicon
5. The formation of hydrogen passivated silicon single‐crystal surfaces using ultraviolet cleaning and HF etching
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