Combining nanostructuration with boron doping to alter sub band gap acceptor states in diamond materials-Reference-Cited by-同舟云学术

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Combining nanostructuration with boron doping to alter sub band gap acceptor states in diamond materials

Published:2018 Issue:34 Volume:6 Page:16645-16654
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Choudhury Sneha¹²³⁴⁵,Kiendl Benjamin⁶⁷⁸⁴,Ren Jian¹²³⁴⁹,Gao Fang¹⁰¹¹⁴^ORCID,Knittel Peter¹⁰¹¹⁴^ORCID,Nebel Christoph¹⁰¹¹⁴,Venerosy Amélie¹²¹³¹⁴¹⁵¹⁶,Girard Hugues¹²¹³¹⁴¹⁵¹⁶^ORCID,Arnault Jean-Charles¹²¹³¹⁴¹⁵¹⁶,Krueger Anke⁶⁷⁸⁴^ORCID,Larsson Karin¹⁷¹⁸¹⁹,Petit Tristan¹²³⁴^ORCID

Affiliation:

1. Institute of Methods for Material Development

2. Helmholtz Zentrum Berlin für Materialien und Energie GmbH

3. D-12489 Berlin

4. Germany

5. Institute of Chemistry and Biochemistry

6. Institut für Organische Chemie

7. Universität Würzburg

8. D-97074 Würzburg

9. Department of Physics

10. Fraunhofer Institute for Applied Solid State Physics (IAF)

11. D-79108 Freiburg

12. CEA

13. LIST

14. Diamond Sensors Laboratory

15. F-91191 Gif-sur-Yvette

16. France

17. Uppsala University

18. Uppsala

19. Sweden

Abstract

Synergistic effect of nanostructuration and boron doping allows sub-bandgap electron acceptor states in diamond materials to be controlled.

Funder

Volkswagen Foundation

H2020 Future and Emerging Technologies

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TA/C8TA05594G

Reference67 articles.

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