High-performance non-volatile field-effect transistor memories using an amorphous oxide semiconductor and ferroelectric polymer-Reference-Cited by-同舟云学术

High-performance non-volatile field-effect transistor memories using an amorphous oxide semiconductor and ferroelectric polymer

Published:2016 Issue:34 Volume:4 Page:7917-7923
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Wang Yu¹²³⁴⁵,Kizu Takio⁶⁷⁸⁹,Song Lei¹²³⁴⁵,Zhang Yujia¹²³⁴⁵,Jiang Sai¹²³⁴⁵,Qian Jun¹²³⁴⁵,Wang Qijing¹²³⁴⁵,Shi Yi¹²³⁴⁵,Zheng Youdou¹²³⁴⁵,Nabatame Toshihide¹⁰⁷⁸⁹,Tsukagoshi Kazuhito⁶⁷⁸⁹,Li Yun¹²³⁴⁵

Affiliation:

1. National Laboratory of Solid State Microstructures

2. School of Electronic Science and Engineering

3. Collaborative Innovation Center of Advanced Microstructures

4. Nanjing University

5. Nanjing 210093

6. International Center for Materials Nanoarchitectonics (WPI-MANA)

7. National Institute for Materials Science (NIMS)

8. Tsukuba

9. Japan

10. MANA Foundry and MANA Advanced Device Materials Group

Abstract

High-performance Fe-FET memories using InSiO and P(VDF–TrFE) as the semiconductor and dielectric, respectively, were fabricated with a carrier mobility of 84.1 cm V⁻¹ s⁻¹.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/TC/C6TC01768A

Reference39 articles.

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4. Low Power 6.0-Inch Extended Graphics Array Reflective Liquid Crystal Display using Indium Gallium Zinc Oxide Semiconductor with Electronic Paper Function

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