Evolution of low-dimensional material-based field-effect transistors-Reference-Cited by-同舟云学术

Evolution of low-dimensional material-based field-effect transistors

Published:2021 Issue:10 Volume:13 Page:5162-5186
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Ahmad Waqas¹²³⁴⁵^ORCID,Gong Youning¹²³⁴⁵,Abbas Ghulam¹²³⁴⁵,Khan Karim¹²³⁴⁵^ORCID,Khan Maaz⁶⁷⁸⁹¹⁰,Ali Ghafar⁶⁷⁸⁹¹⁰,Shuja Ahmed¹¹¹²¹³¹⁰,Tareen Ayesha Khan¹²³⁴⁵^ORCID,Khan Qasim¹²³⁴⁵,Li Delong¹²³⁴⁵^ORCID

Affiliation:

1. Institute of Microscale Optoelectronics

2. International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education

3. Shenzhen University

4. Shenzhen 518060

5. P. R. China

6. Nanomaterials Research Group

7. Physics Division

8. PINSTECH

9. Nilore 45650

10. Pakistan

11. Centre for Advanced Electronics & Photovoltaic Engineering

12. International Islamic University

13. Islamabad

Abstract

The recent research progress on low-dimensional material-based FETs, including their classification and applications, has been reviewed.

Funder

Science, Technology and Innovation Commission of Shenzhen Municipality

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NR/D0NR07548E

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