Interfacial modulation and plasmonic effect mediated high-brightness green light sources in a single Ga-doped ZnO microwire based heterojunction-Reference-Cited by-同舟云学术

Interfacial modulation and plasmonic effect mediated high-brightness green light sources in a single Ga-doped ZnO microwire based heterojunction

Published:2022 Issue:38 Volume:24 Page:6642-6653
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Liu Xingjie¹,Liu Maosheng¹,Zhu Rongde¹,Li Binghui²,Wan Peng¹,Shi Daning¹,Kan Caixia¹^ORCID,Jiang Mingming¹^ORCID

Affiliation:

1. College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, China

2. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

Abstract

High-brightness, stable and nearly droop-free green LEDs based on a carefully constructed n-AuNPs@ZnO:Ga MW/MgO/p-InGaN heterojunction were proposed and investigated experimentally.

Funder

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Nanjing University of Aeronautics and Astronautics

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/CE/D2CE00917J

Reference70 articles.

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5. High-temperature electroluminescence properties of InGaN red 40 × 40 μm2 micro-light-emitting diodes with a peak external quantum efficiency of 3.2%

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