High-temperature electroluminescence properties of InGaN red 40 × 40 μm2 micro-light-emitting diodes with a peak external quantum efficiency of 3.2%-Reference-Cited by-同舟云学术

High-temperature electroluminescence properties of InGaN red 40 × 40 μm2 micro-light-emitting diodes with a peak external quantum efficiency of 3.2%

Published:2021-12-06 Issue:23 Volume:119 Page:231101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Li Panpan¹^ORCID,David Aurelien²,Li Hongjian¹^ORCID,Zhang Haojun¹^ORCID,Lynsky Cheyenne¹^ORCID,Yang Yunxuan³,Iza Mike¹,Speck James S.¹,Nakamura Shuji¹³^ORCID,DenBaars Steven P.¹³^ORCID

Affiliation:

1. Materials Department, University of California, Santa Barbara, California 93106, USA

2. Google, 1600 Amphitheater Parkway, Mountain View, California 94043, USA

3. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA

Funder

Solid State Lighting and Energy Electronics Center, University of California Santa Barbara

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0070275

Reference28 articles.

1. High‐power InGaN/GaN double‐heterostructure violet light emitting diodes

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3. III-Nitride full-scale high-resolution microdisplays

4. Size-independent low voltage of InGaN micro-light-emitting diodes with epitaxial tunnel junctions using selective area growth by metalorganic chemical vapor deposition

5. Demonstration of high efficiency cascaded blue and green micro-light-emitting diodes with independent junction control

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