SiO2/Ta2O5 heterojunction ECM memristors: physical nature of their low voltage operation with high stability and uniformity-Reference-Cited by-同舟云学术

SiO2/Ta2O5 heterojunction ECM memristors: physical nature of their low voltage operation with high stability and uniformity

Published:2020 Issue:7 Volume:12 Page:4320-4327
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Guo Xiangyu¹²³⁴,Wang Qi¹²³⁴^ORCID,Lv Xiaowei¹²³⁴,Yang Huiyong¹²³⁴,Sun Kai¹²³⁴,Yang Dongliang¹²³⁴,Zhang Haitao¹²³⁴,Hasegawa Tsuyoshi⁵⁶⁷⁸^ORCID,He Deyan¹²³⁴

Affiliation:

1. School of Physical Science and Technology

2. Lanzhou University

3. Lanzhou 730000

4. China

5. Faculty of Science and Engineering

6. Waseda University

7. Tokyo

8. 169-8555 Japan

Abstract

Forming-free, uniform and reliable memristors are fabricated using the SiO₂/Ta₂O₅ bi-layer structure. The effects of the growth, shape and dissolved degree of conductive filaments on the stability of the device are elucidated.

Funder

National Natural Science Foundation of China

Central Universities in China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NR/C9NR09845C

Reference42 articles.

1. Analysis of the Bipolar Resistive Switching Behavior of a Biocompatible Glucose Film for Resistive Random Access Memory

2. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges