Solution-processed p-type copper oxide thin-film transistors fabricated by using a one-step vacuum annealing technique
Author:
Affiliation:
1. College of Physics and Lab of New Fiber Materials and Modern Textile
2. Growing Base for State Key Laboratory
3. Qingdao University
4. Qingdao 266071
5. China
6. Electronic Ceramics Center
7. DongEui University
8. Busan 614-714
9. Korea
Abstract
High-performance p-type CuxO TFTs were fabricated by a solution process and annealed at various temperatures under vacuum.
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2015/TC/C5TC02384J
Reference28 articles.
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4. A Review on Cu2O and CuI-Based p-Type Semiconducting Transparent Oxide Materials: Promising Candidates for New Generation Oxide Based Electronics
5. Solution-processable metal oxide semiconductors for thin-film transistor applications
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