Nanocomposites of chalcogenide phase-change materials: from C-doping of thin films to advanced multilayers

Author:

Chahine Rebecca1,Tomelleri Martina1,Paterson Jessy1,Bernard Mathieu1,Bernier Nicolas1,Pierre François1,Rouchon Denis1,Jannaud Audrey1,Mocuta Cristian2,Giordano Valentina M.3ORCID,Hippert Françoise4ORCID,Noé Pierre1ORCID

Affiliation:

1. Université Grenoble Alpes, CEA, LETI, Grenoble F-38000, France

2. Synchrotron SOLEIL, F-91192 Gif-sur-Yvette, France

3. ILM, UMR 5306 Univ. Lyon 1-CNRS, Villeurbanne Cedex F-69622, France

4. Université Grenoble Alpes, CNRS, Grenoble INP, LMGP, Grenoble F-38000, France

Abstract

Engineering of chalcogenide phase-change materials at the nanoscale is required to improve the performances of ultimate size memory devices and reduce their power consumption.

Funder

Agence Nationale de la Recherche

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Reference63 articles.

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4. T.Kim , H.Choi , M.Kim , J.Yi , D.Kim , S.Cho , H.Lee , C.Hwang , E.-R.Hwang , J.Song , S.Chae , Y.Chun and J.-K.Kim , High-performance, cost-effective 2z nm two-deck cross-point memory integrated by self-align scheme for 128 Gb SCM, 2018 IEEE International Electron Devices Meeting (IEDM) , 2018, pp. 37.1.1–37.1.4

5. Phase change memory applications: the history, the present and the future

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