Random alloy fluctuations and structural inhomogeneities in c-plane InxGa1−xN quantum wells: theory of ground and excited electron and hole states-Reference-Cited by-同舟云学术

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Random alloy fluctuations and structural inhomogeneities in c-plane InxGa1−xN quantum wells: theory of ground and excited electron and hole states

Published:2016 Issue:69 Volume:6 Page:64513-64530
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Tanner Daniel S. P.¹²³⁴⁵,Caro Miguel A.⁶⁷⁸⁹¹⁰,O'Reilly Eoin P.¹²³⁴⁵,Schulz Stefan¹²³

Affiliation:

1. Tyndall National Institute

2. Cork

3. Ireland

4. Department of Physics

5. University College Cork

6. Department of Electrical Engineering and Automation

7. Aalto University

8. Espoo

9. Finland

10. COMP Centre of Excellence in Computational Nanoscience

Abstract

Atomistic analysis of carrier localisation effects in ground and excited electron and hole states inc-plane InGaN quantum wells.

Funder

Seventh Framework Programme

Science Foundation Ireland

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C6RA07540A

Reference56 articles.

1. Design of nitride semiconductors for solar energy conversion

2. S. Nakamura and S.Chichibu, Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes, Taylor & Francis, London, 2000

3. Nitride-based semiconductors for blue and green light-emitting devices

4. Enhanced carrier localization in near-ultraviolet multiple quantum wells using quaternary AlInGaN as the well layers

5. Solid-State Lighting

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4. Atomistic analysis of Auger recombination in c -plane (In,Ga)N/GaN quantum wells: Temperature-dependent competition between radiative and nonradiative recombination;Physical Review B;2022-05-12

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