GaN:Pr3+ nanostructures for red solid state light emission-Reference-Cited by-同舟云学术

GaN:Pr3+ nanostructures for red solid state light emission

Published:2014 Issue:108 Volume:4 Page:62869-62877
ISSN:2046-2069
Container-title:RSC Adv.
language:en
Short-container-title:RSC Adv.

Author:

Rodrigues J.¹²³,Ben Sedrine N.¹²³,Felizardo M.⁴⁵⁶⁷⁸,Soares M. J.¹²³,Alves E.⁴⁵⁶⁷⁸,Neves A. J.¹²³,Fellmann V.⁹¹⁰¹¹¹²,Tourbot G.⁹¹⁰¹¹¹²,Auzelle T.⁹¹⁰¹¹¹²,Daudin B.⁹¹⁰¹¹¹²,Boćkowski M.¹³¹⁴¹⁵,Lorenz K.⁴⁵⁶⁷⁸,Monteiro T.¹²³

Affiliation:

1. Departamento de Física & I3N

2. Universidade de Aveiro

3. 3810-193 Portugal

4. IST

5. Instituto Superior Técnico

6. Campus Tecnológico e Nuclear

7. Universidade de Lisboa

8. 2695-066 Bobadela LRS, Portugal

9. Univ. Grenoble Alpes

10. CEA/CNRS Group

11. “Nanophysique et Semiconducteurs”

12. F-38000 Grenoble, France

13. Institute of High Pressure Physics

14. Polish Academy of Sciences

15. 01-142 Warsaw, Poland

Abstract

Photoluminescence study of praseodymium implanted and annealed GaN films, quantum wells, nanowires and quantum dots.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/RA/C4RA08571J

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4. Impact of AlGaN on luminescence capability of rare-earth ions in AlGaN

5. Influence of the AlN molar fraction on the structural and optical properties of praseodymium-doped AlxGa1−xN (0⩽x⩽1) alloys

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