A WSe2 vertical field emission transistor-Reference-Cited by-同舟云学术

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A WSe2 vertical field emission transistor

Published:2019 Issue:4 Volume:11 Page:1538-1548
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Di Bartolomeo Antonio¹²³⁴⁵^ORCID,Urban Francesca¹²³⁴⁵^ORCID,Passacantando Maurizio⁶⁷⁸⁹⁴^ORCID,McEvoy Niall¹⁰¹¹¹²¹³^ORCID,Peters Lisanne¹⁰¹¹¹²¹³,Iemmo Laura¹²³⁴⁵^ORCID,Luongo Giuseppe¹²³⁴⁵^ORCID,Romeo Francesco¹²³⁴¹⁴^ORCID,Giubileo Filippo¹⁴³⁴^ORCID

Affiliation:

1. Physics Department “E. R. Caianiello”

2. University of Salerno

3. Fisciano 84084

4. Italy

5. Interdepartmental Centre NanoMates

6. Department of Physical and Chemical Science

7. University of L'Aquila

8. and CNR-SPIN L'Aquila

9. L'Aquila

10. AMBER & School of Chemistry

11. Trinity College Dublin

12. Dublin 2

13. Ireland

14. CNR-SPIN Salerno

Abstract

We demonstrate a back-gate modulated field-emission current from a WSe₂ monolayer and propose a new field-emission vertical transistor concept.

Funder

Regione Campania

Consiglio Nazionale delle Ricerche

Science Foundation Ireland

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2019/NR/C8NR09068H

Reference79 articles.

1. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

2. Recent development in 2D materials beyond graphene

3. Recent development of two-dimensional transition metal dichalcogenides and their applications

4. Mechanism for Liquid Phase Exfoliation of MoS2

5. Recent progress in chemical vapor deposition growth of two-dimensional transition metal dichalcogenides

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