Chemical-vapor-deposited 2D VSe<sub>2</sub> nanosheet with threshold switching behaviors for Boolean logic calculations and leaky integrate-and-fire functions-Reference-Cited by-同舟云学术

Chemical-vapor-deposited 2D VSe₂ nanosheet with threshold switching behaviors for Boolean logic calculations and leaky integrate-and-fire functions

Published:2023 Issue:15 Volume:11 Page:5032-5038
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Zhong Lun¹,Xie Wanxuan¹,Yin Jinxiang¹,Jie Wenjing¹^ORCID

Affiliation:

1. College of Chemistry and Materials Science, Sichuan Normal University, Chengdu, 610066, China

Abstract

Reliable threshold switching behaviors can be observed in VSe2 nanosheets after an annealing method owing to the phase transition from the 1T to 2H. The VSe2 memristor can be employed to perform Boolean logic calculations and simulate LIF functions.

Funder

Natural Science Foundation of Sichuan Province

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D3TC00221G

Reference38 articles.

1. Leaky integrate-and-fire neurons based on perovskite memristor for spiking neural networks

2. Neuromorphic nanoelectronic materials

3. Various Threshold Switching Devices for Integrate and Fire Neuron Applications

4. Dual-Ferroelectric-Coupling-Engineered Two-Dimensional Transistors for Multifunctional In-Memory Computing

5. Artificial Visual Perception Nervous System Based on Low-Dimensional Material Photoelectric Memristors

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