Localised nanoscale resistive switching in GaP thin films with low power consumption-Reference-Cited by-同舟云学术

Localised nanoscale resistive switching in GaP thin films with low power consumption

Published:2017 Issue:8 Volume:5 Page:2153-2159
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Kurnia Fran¹²³⁴^ORCID,Liu Chunli⁵⁶⁷⁸,Liu Guangqing¹²³⁴,Vasudevan Rama K.⁹¹⁰¹¹¹²,Yang Sang Mo⁹¹⁰¹¹¹²¹³,Kalinin Sergei V.⁹¹⁰¹¹¹²,Valanoor Nagarajan¹²³⁴,Hart Judy N.¹²³⁴^ORCID

Affiliation:

1. School of Materials Science and Engineering

2. UNSW Sydney

3. NSW 2052

4. Australia

5. Department of Physics and Oxide Research Center

6. Hankuk University of Foreign Studies

7. Yongin 449-791

8. South Korea

9. Center for Nanophase Materials Sciences

10. Oak Ridge National Laboratory

11. Oak Ridge

12. USA

13. Department of Physics

Abstract

Resistive switching behaviour is observed for GaP thin films. Conductive AFM and FORC-IV measurements show that the current is localised at grain boundaries. The switching mechanism is driven by Ga migration along the grain boundaries.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TC/C6TC04895A

Reference48 articles.

1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

2. Memristive devices for computing

3. Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere

4. Role of structural defects in the unipolar resistive switching characteristics of Pt∕NiO∕Pt structures

5. The evolution of conducting filaments in forming-free resistive switching Pt/TaOx/Pt structures

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantum Transport Properties of Nanosized Ta₂O₅ Resistive Switches: Variable Transmission Atomic Synapses for Neuromorphic Electronics;ACS Applied Nano Materials;2023-11-15

2. Synaptic mechanisms of four W/WO _x /ITO memristors with different WO _x structures;Journal of Physics D: Applied Physics;2022-08-23

3. Optical Tuning of Resistance Switching in Polycrystalline Gallium Phosphide Thin Films;The Journal of Physical Chemistry Letters;2021-03-02

4. Synergistic Effect of Singly Charged Oxygen Vacancies and Ligand Field for Regulating Transport Properties of Resistive Switching Memories;The Journal of Physical Chemistry C;2019-10-15

5. Resistive switching memory effects in chalcogenide semiconductor ZnGa2Se4 thin films;Surface Engineering;2019-06-10