Synergistic Effect of Singly Charged Oxygen Vacancies and Ligand Field for Regulating Transport Properties of Resistive Switching Memories-Reference-Cited by-同舟云学术

Synergistic Effect of Singly Charged Oxygen Vacancies and Ligand Field for Regulating Transport Properties of Resistive Switching Memories

Author:

Das D.¹,Barman A.¹,Kumar S.¹,Sinha A. K.²³,Gupta M.⁴,Singhal R.⁵,Johari P.¹^ORCID,Kanjilal A.¹^ORCID

Affiliation:

1. Department of Physics, School of Natural Sciences, Shiv Nadar University, NH-91, Dadri, Gautam Buddha Nagar, Uttar Pradesh 201314, India

2. Synchrotron Utilization Section, Raja Ramanna Center for Advanced Technology (RRCAT), Indore, Madhya Pradesh 452013, India

3. Homi Bhabha National Institute, Anishaktinagar, Mumbai 400094, India

4. UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore, Madhya Pradesh 452001, India

5. Department of physics, Malaviya National Institute of Technology Jaipur, JLN Marg, Malaviya Nagar, Jaipur 302017, India

Funder

Science and Engineering Research Board

Shiv Nadar University

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

Reference58 articles.

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