A route to engineered high aspect-ratio silicon nanostructures through regenerative secondary mask lithography-Reference-Cited by-同舟云学术

A route to engineered high aspect-ratio silicon nanostructures through regenerative secondary mask lithography

Published:2022 Issue:5 Volume:14 Page:1847-1854
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Michalska Martyna¹^ORCID,Laney Sophia K.¹,Li Tao¹,Tiwari Manish K.²³^ORCID,Parkin Ivan P.⁴^ORCID,Papakonstantinou Ioannis¹^ORCID

Affiliation:

1. Photonic Innovations Lab, Department of Electronic & Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UK

2. Nanoengineered Systems Laboratory, Department of Mechanical Engineering, University College London, Torrington Place, London WC1E 7JE, UK

3. Wellcome/EPSRC Centre for Interventional and Surgical Sciences (WEISS), University College London, London, W1W 7TS, UK

4. Department of Chemistry, University College London, Torrington Place, London WC1E 7JE, UK

Abstract

A versatile fabrication platform is presented to achieve tailored silicon nanostructures (pillars, sharp/truncated/re-entrant cones), of pitch down to ∼50 nm, and high-aspect ratio (>10), enabling exceptional tuning of nanopattern-induced properties.

Funder

Engineering and Physical Sciences Research Council

Lloyd's Register Foundation

H2020 European Research Council

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NR/D1NR07024J

Reference40 articles.

1. Black silicon solar cells with interdigitated back-contacts achieve 22.1% efficiency