Surface grafting of octylamine onto poly(ethylene-alt-maleic anhydride) gate insulators for low-voltage DNTT thin-film transistors-Reference-Cited by-同舟云学术

Surface grafting of octylamine onto poly(ethylene-alt-maleic anhydride) gate insulators for low-voltage DNTT thin-film transistors

Published:2016 Issue:12 Volume:18 Page:8522-8528
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Choe Yun-Seo¹²³⁴⁵,Yi Mi Hye¹²³⁴,Kim Ji-Heung⁵⁶⁷⁴,Kim Yun Ho¹²³⁴,Jang Kwang-Suk⁸⁹¹⁰⁴

Affiliation:

1. Division of Advanced Materials

2. Korea Research Institute of Chemical Technology

3. Daejeon 34114

4. Republic of Korea

5. School of Chemical Engineering

6. Sungkyunkwan University

7. Suwon 16419

8. Department of Chemical Engineering

9. Hankyong National University

10. Anseong 17579

Abstract

We report the surface grafting of octylamine onto a poly(ethylene-alt-maleic anhydride) (PEMA) gate insulator for enhancing the performance of dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) thin-film transistors.

Funder

Ministry of Science, ICT and Future Planning

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2016/CP/C5CP06320E

Reference39 articles.

1. Recent Progress in Organic Electronics: Materials, Devices, and Processes

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3. Conformable, flexible, large-area networks of pressure and thermal sensors with organic transistor active matrixes

4. Ultralow-power organic complementary circuits

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