Effect of the Degree of the Gate‐Dielectric Surface Roughness on the Performance of Bottom‐Gate Organic Thin‐Film Transistors-Reference-Cited by-同舟云学术

Effect of the Degree of the Gate‐Dielectric Surface Roughness on the Performance of Bottom‐Gate Organic Thin‐Film Transistors

Published:2020-03-29 Issue:10 Volume:7 Page:1902145
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Geiger Michael¹^ORCID,Acharya Rachana¹,Reutter Eric¹,Ferschke Thomas²^ORCID,Zschieschang Ute¹,Weis Jürgen¹,Pflaum Jens²³^ORCID,Klauk Hagen¹,Weitz Ralf Thomas⁴⁵

Affiliation:

1. Max Planck Institute for Solid State Research Heisenbergstr. 1 Stuttgart 70569 Germany

2. Experimental Physics VI Julius‐Maximilians‐University Würzburg Am Hubland Würzburg 97074 Germany

3. Bavarian Center for Applied Energy Research (ZAE Bayern e.V.) Magdalena‐Schoch‐Straße 3 Würzburg 97074 Germany

4. AG Physics of Nanosystems Faculty of Physics Ludwig Maximilians University Amalienstraße 54 München 80799 Germany

5. 1st Physical Institute Faculty of Physics University of Göttingen Friedrich‐Hund‐Platz 1 Göttingen 37077 Germany

Funder

Deutsche Forschungsgemeinschaft

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.201902145

Reference63 articles.

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5. A 3.3 V 6-Bit 100 kS/s Current-Steering Digital-to-Analog Converter Using Organic P-Type Thin-Film Transistors on Glass

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