The role of oxygen in dramatically enhancing the electrical properties of solution-processed Zn–Sn–O thin-film transistors-Reference-Cited by-同舟云学术

The role of oxygen in dramatically enhancing the electrical properties of solution-processed Zn–Sn–O thin-film transistors

Published:2017 Issue:26 Volume:5 Page:6521-6526
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Cho Soyeon¹²³⁴,Yang Jong-Heon¹²³⁴,Oh Jong Gyu⁵⁶⁷⁸,Cho Sung-Haeng¹²³⁴,Hwang Chi-Sun¹²³⁴,Jang Jaeyoung⁵⁶⁷⁸^ORCID,Nam Sooji¹²³⁴^ORCID

Affiliation:

1. Realistic Display Research Group

2. Electronics and Telecommunications Research Institute (ETRI)

3. Daejeon

4. Korea

5. Department of Energy Engineering

6. Hanyang University

7. Seoul 04763

8. Republic of Korea

Abstract

Solution-processed and oxygen-annealed Zn–Sn–O TFTs were developed using tin(ii) 2-ethylhexanoate as the precursor, exhibiting excellent electrical performance.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TC/C7TC01190C

Reference22 articles.

1. Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process

2. Large-Scale Precise Printing of Ultrathin Sol-Gel Oxide Dielectrics for Directly Patterned Solution-Processed Metal Oxide Transistor Arrays

3. Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing

4. Flexible metal-oxide devices made by room-temperature photochemical activation of sol–gel films

5. Boost Up Mobility of Solution-Processed Metal Oxide Thin-Film Transistors via Confining Structure on Electron Pathways

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The influence of annealing atmosphere on sputtered indium oxide thin-film transistors;Journal of Physics D: Applied Physics;2023-07-24

2. Electrospinning‐Driven Binary Oxide Nanofiber Networks with Tunable Amorphous Microstructure for Booming Transistors and Circuits Operation;Advanced Electronic Materials;2023-03-09

3. XANES Studies of Zinc Tin Oxide Films Deposited by Atomic Layer Deposition: Revealing Process-Structure Relationships for Amorphous Oxide Semiconductors;The Journal of Physical Chemistry C;2022-12-22

4. Study of oxygen plasma treatment on solution-processed SnO _x thin-film transistors;Journal of Physics D: Applied Physics;2022-05-27

5. Effect of annealing on the structural, optical and electrical properties of (F, Zn) double doped SnO2 nanoparticles obtained by the laser pyrolysis method;Materials Science in Semiconductor Processing;2022-05