Electroluminescence in a rectifying graphene/InGaN junction-Reference-Cited by-同舟云学术

Electroluminescence in a rectifying graphene/InGaN junction

Author:

Cho Hak Dong¹²³⁴,Yoon Im Taek¹²³⁴,Yuldashev Sh. U.⁵²³⁴,Kang Tae Won¹²³⁴⁵,Kim Deuk Young¹²³⁴⁶,Lee Jong-Kwon⁷⁸⁹⁴^ORCID

Affiliation:

1. Quantum Functional Semiconductor Research Center

2. Dongguk University

3. Seoul 04620

4. Republic of Korea

5. Nano Information Technology Academy

6. Division of Physics and Semiconductor Science

7. Department of Nanostructure Technology

8. National NanoFab Center

9. Daejeon 34141

Abstract

A graphene-InGaN Schottky junction has been successfully fabricated by transferring graphene layers onto n-type In_0.23Ga_0.77N/GaN/Al₂O₃ substrates.

Funder

National Research Foundation of Korea

Ministry of Education

National Research Council of Science & Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

Reference30 articles.

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