Impact of proton-induced transmutation doping in semiconductors for space applications
Author:
Affiliation:
1. Department of Nuclear Science and Engineering
2. Massachusetts Institute of Technology
3. Cambridge
4. USA
5. Space Vehicles Directorate
6. Air Force Research Laboratory
7. Kirtland Air Force Base
Abstract
Proton irradiation typical of detector lifetime in orbit does not change semiconductor chemistry sufficiently through transmutation to alter device performance.
Funder
U.S. Department of Defense
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2019/TC/C9TC02995H
Reference22 articles.
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2. Ion Composition of the Earth’s Radiation Belts in the Range from 100 keV to 100 MeV / nucleon $100\mbox{ MeV}/\mbox{nucleon}$ : Fifty Years of Research
3. G. Was , Fundamentals of Radiation Materials Science: Metals and Alloys , 2007 , pp. 1–827
4. Proton Irradiation Effects on the Performance of III-V-Based, Unipolar Barrier Infrared Detectors
5. K. Krane , Introductory Nuclear Physics , Wiley , 1987
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