Broadband near-infrared BaMSi3O9:Cr3+ (M = Zr, Sn, Hf) phosphors for light-emitting diode applications-Reference-Cited by-同舟云学术

Broadband near-infrared BaMSi3O9:Cr3+ (M = Zr, Sn, Hf) phosphors for light-emitting diode applications

Published:2021 Issue:24 Volume:8 Page:5186-5194
ISSN:2052-1553
Container-title:Inorganic Chemistry Frontiers
language:en
Short-container-title:Inorg. Chem. Front.

Author:

Zhang Yan¹,Liang Yanjie¹^ORCID,Miao Shihai¹^ORCID,Chen Dongxun¹^ORCID,Yan Shao¹,Liu Jingwei¹

Affiliation:

1. Key Laboratory for Liquid-Solid Structure Evolution and Processing of Materials, Ministry of Education, Shandong University, Jinan 250061, China

Abstract

Cr3+-Doped BaMSi3O9 (M = Zr, Sn, Hf) NIR-emitting phosphors have been developed, which exhibit a broad NIR emission band over 650–1200 nm with a tunable band maximum longer than 800 nm and a FWHM of more than 155 nm upon blue light excitation.

Funder

Shandong University

Natural Science Foundation of Shandong Province

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Inorganic Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/QI/D1QI01082D

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