Electrical monitoring of organic crystal phase transition using MoS<sub>2</sub> field effect transistor-Reference-Cited by-同舟云学术

Electrical monitoring of organic crystal phase transition using MoS₂ field effect transistor

Published:2023 Issue:6 Volume:5 Page:1681-1690
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Boulet Ilan¹,Pascal Simon¹^ORCID,Bedu Frederic¹,Ozerov Igor¹^ORCID,Ranguis Alain¹,Leoni Thomas¹,Becker Conrad¹^ORCID,Masson Laurence¹^ORCID,Matkovic Aleksandar²,Teichert Christian²,Siri Olivier¹^ORCID,Attaccalite Claudio¹^ORCID,Huntzinger Jean-Roch³,Paillet Matthieu³,Zahab Ahmed³,Parret Romain¹^ORCID

Affiliation:

1. Aix Marseille Université, CNRS, CINAM, UMR 7325, Campus de Luminy, 13288, Marseille, France

2. Institute of Physics, Montanuniversität Leoben, 8700, Leoben, Austria

3. Laboratoire Charles Coulomb, UMR 221, Univ. Montpellier, CNRS, Montpellier, France

Abstract

MoS2 transistors enable fast and accurate detection of structural modifications that occur during phases transitions of the quinoidal zwitterions layer.

Funder

OeAD-GmbH

Agence Nationale de la Recherche

Österreichische Agentur für Internationale Mobilität und Kooperation in Bildung, Wissenschaft und Forschung

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NA/D2NA00817C

Reference51 articles.

1. Sensing Behavior of Atomically Thin-Layered MoS2 Transistors