Bottom-electrode induced defects in self-assembled monolayer (SAM)-based tunnel junctions affect only the SAM resistance, not the contact resistance or SAM capacitance-Reference-Cited by-同舟云学术

Bottom-electrode induced defects in self-assembled monolayer (SAM)-based tunnel junctions affect only the SAM resistance, not the contact resistance or SAM capacitance

Published:2018 Issue:36 Volume:8 Page:19939-19949
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Sangeeth C. S. Suchand¹²³⁴,Jiang Li¹²³⁴,Nijhuis Christian A.¹²³⁴⁵^ORCID

Affiliation:

1. Department of Chemistry

2. National University of Singapore

3. Singapore 117543

4. Singapore

5. Centre for Advanced 2D Materials and Graphene Research Centre

Abstract

In large area molecular junctions, defects are always present and can be caused by impurities and/or defects in the electrode materials and/or SAMs, but how they affect the electrical characteristics of junctions has rarely been studied.

Funder

Ministry of Education

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/RA/C8RA01513A

Reference71 articles.

1. Metal-Controlled Magnetoresistance at Room Temperature in Single-Molecule Devices

2. Kondo Effect in a Neutral and Stable All Organic Radical Single Molecule Break Junction

3. Large Magnetoresistance in Single-Radical Molecular Junctions