p-Type ohmic contact to MoS<sub>2</sub><i>via</i> binary compound electrodes-Reference-Cited by-同舟云学术

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p-Type ohmic contact to MoS₂via binary compound electrodes

Published:2023 Issue:8 Volume:11 Page:3119-3126
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Ren Yin-Ti¹²³,Chen Yuan-Tao³,Hu Liang³,Wang Jiang-Long²,Gong Peng-Lai²,Zhang Hu²,Huang Li³^ORCID,Shi Xing-Qiang²^ORCID

Affiliation:

1. Harbin Institute of Technology, Harbin 150080, China

2. College of Physics Science and Technology, Key Laboratory of Optic-Electronic Information and Materials of Hebei Province, Institute of Life Science and Green Development, Hebei University, Baoding 071002, China

3. Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China

Abstract

Both n- and p-type ohmic contact to MoS2 can be obtained via different CuS surfaces, due to the weak metallicity and large work function variation of the CuS surfaces, and due to interface quasi-bonding between CuS and MoS2.

Funder

National Natural Science Foundation of China

Steel and Iron Foundation of Hebei Province

Hebei University

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D2TC05088A

Reference38 articles.

1. Fermi-level depinning of 2D transition metal dichalcogenide transistors

2. Visualizing the metal- MoS2 contacts in two-dimensional field-effect transistors with atomic resolution

3. Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions

4. Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors

5. Ultralow contact resistance between semimetal and monolayer semiconductors

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1. Ab initio study of oxygen vacancy filament formation at Ta/HfO2 interface;Surfaces and Interfaces;2024-06

2. Graphene/M₂OS (M = Ga, In) van der Waals Heterostructure with Robust Ohmic Contact;ACS Applied Electronic Materials;2024-03-26

3. Spin-dependent multilevel interactions at a nonmagnetic/magnetic MoSe2/VSe2 van der Waals interface and multifunctional properties;Physical Review B;2024-01-16

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