Fermi-level depinning of 2D transition metal dichalcogenide transistors-Reference-Cited by-同舟云学术

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Fermi-level depinning of 2D transition metal dichalcogenide transistors

Published:2021 Issue:35 Volume:9 Page:11407-11427
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Chen Ruo-Si¹²,Ding Guanglong³,Zhou Ye³,Han Su-Ting²^ORCID

Affiliation:

1. College of Electronics and Information Engineering, Shenzhen 518060, P. R. China

2. Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China

3. Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China

Abstract

In this review, we summarize the recent progress on how to circumvent FLP between 2D TMD semiconductors and metals.

Funder

National Natural Science Foundation of China

Guangdong Science and Technology Department

Shenzhen Science and Technology Innovation Commission

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D1TC01463C

Reference209 articles.

1. Nanometre-scale electronics with III–V compound semiconductors

2. Channel Length Scaling of MoS2MOSFETs

3. GaSb Inversion-Mode PMOSFETs With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric

4. Electric Field Effect in Atomically Thin Carbon Films

5. High Performance Multilayer MoS2 Transistors with Scandium Contacts

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