Tuning the threshold voltage from depletion to enhancement mode in a multilayer MoS2 transistor via oxygen adsorption and desorption
Author:
Affiliation:
1. Department of Physics
2. Auburn University
3. Auburn
4. USA
5. Institute of Super-Microstructure and Ultrafast Process in Advanced Materials, Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, School of Physics and Electronics
Abstract
In this work, a simple method based on low-temperature annealing in air is developed for effective chemical doping in MoS2. The threshold voltage of multilayer MoS2 FET can be effectively tuned from depletion mode (Vth = ¬1.8 V) to enhancement mode (Vth = 1.1 V) by annealing in air at 150 °C.
Funder
Auburn University
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://pubs.rsc.org/en/content/articlepdf/2016/CP/C5CP06322A
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