Strong interlayer coupling and unusual antisite defect-mediated p-type conductivity in GePx (x = 1, 2)-Reference-Cited by-同舟云学术

Strong interlayer coupling and unusual antisite defect-mediated p-type conductivity in GeP_x (x = 1, 2)

Published:2023 Issue:20 Volume:15 Page:9139-9147
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Chen Guoxujia¹,Meng Weiwei²,Guan Xiaoxi¹,Zhao Peili¹,Jia Shuangfeng¹,Zheng He¹³⁴,Zhao Dongshan¹,Wang Jianbo¹⁵

Affiliation:

1. School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China

2. South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China

3. Suzhou Institute of Wuhan University, Suzhou, Jiangsu 215124, China

4. Wuhan University Shenzhen Research Institute, Shenzhen, Guangdong 518057, China

5. Core Facility of Wuhan University, Wuhan 430072, China

Abstract

As an emerging candidate for anisotropic two-dimensional materials, the group IV–V family (e.g. GeP, GeP2) has appealing applications in photoelectronics.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

China Postdoctoral Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D3NR01677C

Reference52 articles.

1. Highly Polarization-Sensitive, Broadband, Self-Powered Photodetector Based on Graphene/PdSe2/Germanium Heterojunction

2. Monolithically Integrated Flexible Black Phosphorus Complementary Inverter Circuits

3. Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors

4. Plasmonic Resonance Enhanced Polarization-Sensitive Photodetection by Black Phosphorus in Near Infrared

5. Polarization-resolved black phosphorus/molybdenum disulfide mid-wave infrared photodiodes with high detectivity at room temperature

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Promoting the carrier mobility of Nb2SiTe4 through cation coordination engineering;Applied Physics Letters;2024-02-19

2. Controlled vapour growth and phase engineering of large-area bilayer WSe2 for optoelectronic applications;Progress in Natural Science: Materials International;2023-12