Poly-GeSn junctionless P-TFTs featuring a record high ION/IOFF ratio and hole mobility by defect engineering
Author:
Affiliation:
1. Department of Engineering and System Science
2. National Tsing Hua University
3. Hsinchu
4. Taiwan
Abstract
2-Stage defect engineering of poly-GeSn (Sn: ∼5.1%) film for bottom-gate junctionless P-channel thin film transistors (JL P-TFTs), including gas annealing and plasma treatment, is investigated in this work.
Funder
Ministry of Science and Technology, Taiwan
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2019/TC/C8TC04972F
Reference28 articles.
1. Leakage current of germanium-on-insulator-based junctionless nanowire transistors
2. Possibility of increased mobility in Ge-Sn alloy system
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