Nanostructured interfacial dipole layers for high-performance and highly stable nonvolatile organic field-effect transistor memory-Reference-Cited by-同舟云学术

Nanostructured interfacial dipole layers for high-performance and highly stable nonvolatile organic field-effect transistor memory

Published:2022 Issue:9 Volume:10 Page:3292-3299
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Yang Yonghao¹²,Li Zhigang¹,Wu Chunhui²,Li Wen²,Wang Jin²,Yi Mingdong²^ORCID,Huang Wei²³

Affiliation:

1. School of Physics and Optoelectronic Engineering, Ludong University, 186 Hongqi Road, Yantai, 264025, China

2. Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China

3. Frontiers Science Center for Flexible Electronics (FSCFE) and Shaanxi Institute of Flexible Electronics (SIFE) Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi’an, 710072, China

Abstract

An interfacial dipole layer formed between the solution-processed charge trapping nanostructures and the active layer enables significant improvement of the charge storage capability and stability.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Shandong Province

Ministry of Education of the People's Republic of China

Natural Science Foundation of Jiangsu Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D1TC05927K

Reference50 articles.