Achieving Reconfigurable Excitatory–Inhibitory Response in Unipolar Synaptic Memtransistors by the Synergistic Effects of Electric Double Layer and Charge Trapping-Reference-Cited by-同舟云学术

Achieving Reconfigurable Excitatory–Inhibitory Response in Unipolar Synaptic Memtransistors by the Synergistic Effects of Electric Double Layer and Charge Trapping

Published:2024-04-11 Issue:7 Volume:6 Page:4869-4875
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Zheng Chaoyue¹²^ORCID,Wang Jie¹,Fu Jingwei¹,He Xiang¹,Ye Zhuqing¹,Li Wen¹,Yi Mingdong¹^ORCID,Xie Linghai¹^ORCID,Ling Haifeng¹^ORCID

Affiliation:

1. State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, Jiangsu 210023, People’s Republic of China

2. Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou, Zhejiang 313001, People’s Republic of China

Funder

National Key Research and Development Program of China

Huzhou Municipal Science and Technology Bureau

National Natural Science Foundation of China

Natural Science Foundation of Zhejiang Province

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c00243

Reference26 articles.

1. The future of electronics based on memristive systems

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4. Flexible multiterminal photoelectronic neurotransistors based on self‐assembled rubber semiconductors for spatiotemporal information processing

5. Selective Release of Excitatory‐Inhibitory Neurotransmitters Emulated by Unipolar Synaptic Transistors via Gate Voltage Amplitude Modulation